| PART |
Description |
Maker |
| UMX4N EMX4 IMX4 UMW6N |
High transition frequency (dual transistors)
|
ROHM[Rohm]
|
| FMW6 FMW7 FMW10 FMW8 |
High Transition Frequency(Dual Transistor)(高转换频率双晶体
|
Rohm CO.,LTD.
|
| 2SC3707 |
Possible with the small current and low voltage High transition frequency fT
|
TY Semiconductor Co., Ltd
|
| FD1000FH-56 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
|
| FD1000FV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| FD1000FX-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
|
| BFS17W BFS17W. |
RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
RF-Bipolar NPN Type Transistors with transition frequency from 1 to 6 GHz
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| 15GN01MA12 15GN01MA-TL-E ENA1100A |
VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifi er Applications
|
Sanyo Semicon Device
|
| 2SC2216 2SC2717 E000694 |
From old datasheet system
TRANSISTOR (HIGH FREQUENCY, AM HIGH FREQUENCY AMPLIFIER, AM FREQUENCY CONVERTER APPLICATIONS)
TRANSISTOR (TV FINAL PICTURE IF AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| RIO-3392MIL-A1E RIO-3392MIL-A2E RIO-3392MIL |
6U CompactPCI垄莽 Rear Transition Board for MIC-3392MIL
6U CompactPCI? Rear Transition Board for MIC-3392MIL
|
Advantech Co., Ltd.
|
